Sub-10 nm crystalline silicon nanostructures by electron beam induced deposition lithography
نویسندگان
چکیده
منابع مشابه
Limiting factors in sub-10 nm scanning-electron-beam lithography
Achieving the highest possible resolution using scanning-electron-beam lithography SEBL has become an increasingly urgent problem in recent years, as advances in various nanotechnology applications F. S. Bates and G. H. Fredrickson, Annu. Rev. Phys. Chem. 41, 525 1990 ; Black et al., IBM J. Res. Dev. 51, 605 2007 ; Yang et al., J. Chem. Phys. 116, 5892 2002 have driven demand for feature sizes ...
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We investigated novel patterning techniques to produce ultrafine patterns for nanoscale devices. Hydrogen silsesquioxane HSQ was employed as a high-resolution negative tone inorganic electron beam resist. The nanoscale patterns with sub-10 nm linewidth were successfully formed. A trimming process of HSQ by the reactive ion etcher RIE played an important role for the formation of 5 nm nanowire p...
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Exploring the resolution limit of electron-beam lithography is of great interest both scientifically and technologically. However, when electron-beam lithography approaches its resolution limit, imaging and metrology of the fabricated structures by using standard scanning electron microscopy become difficult. In this work, the authors adopted transmission-electron and atomic-force microscopies ...
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ژورنال
عنوان ژورنال: Nanotechnology
سال: 2010
ISSN: 0957-4484,1361-6528
DOI: 10.1088/0957-4484/21/28/285307